DocumentCode :
2058545
Title :
Residual Stresses Measuring of Electrostatic MEM switches by Piezoelectric Layers
Author :
Rezazadeh, Ghader ; Tahmasebi, A. ; Sadeghian, Hamed ; Hosainzadeh, I.
Author_Institution :
Dept. of Mech. Eng., Urmia Univ.
fYear :
2006
fDate :
18-21 Jan. 2006
Firstpage :
1160
Lastpage :
1164
Abstract :
Due to the unique structure and small scale of Micro-Electro-Mechanical Systems (MEMS), residual stresses during the deposition processes can have a profound affect on the functionality of the MEMS structures. Typically, material properties of thin films used in surface micromachining are not controlled during deposition. The residual stress, for example, tends to vary significantly for different deposition methods. Currently, few techniques are available to measure the residual stress in MEMS devices. In this paper, we introduce a new method to estimate the residual stress by calculating the applied voltage to the piezoelectric layers
Keywords :
coating techniques; electrostatic devices; internal stresses; microswitches; piezoelectric thin films; stress measurement; MEMS structure functionality; applied voltage calculation; deposition process residual stresses; electrostatic MEM switches; micro-electromechanical systems; piezoelectric layers; residual stresses measurement; surface micromachining; thin film material properties; Electrostatic measurements; Material properties; Microelectromechanical systems; Micromachining; Micromechanical devices; Piezoelectric films; Residual stresses; Sputtering; Stress measurement; Switches; MEM switches; Piezoelectric; Residual Stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2006. NEMS '06. 1st IEEE International Conference on
Conference_Location :
Zhuhai
Print_ISBN :
1-4244-0139-9
Electronic_ISBN :
1-4244-0140-2
Type :
conf
DOI :
10.1109/NEMS.2006.334671
Filename :
4135153
Link To Document :
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