Characterization of a submicron PMOS in mixer circuits

Author

Yeap, Kim Ho ; Ahmad, Ibrahim ; Rizman, Zairi Ismael ; Chew, Kerlit ; Chong, Kok Hen ; Yong, Yun Thung

Author_Institution

Fac. of Eng. & Green Technol., Tunku Abdul Rahman Univ., Kampar, Malaysia

fYear

2010

fDate

20-21 Nov. 2010

Firstpage

123

Lastpage

126

Abstract

In this paper, we investigate the properties of a submicron _pMOS with a single layer of metallization. The fabrication process and electrical characterization of the device were simulated using the SILVACO TCAD tools. We have applied constant field scaling on the effective channel length, the density of ion implantation for threshold voltage adjustment, and gate oxide thickness. To suppress short channel effects, we have also applied retrograde well implantation, Shallow Trench Isolation (STI), sidewall spacer deposition, silicide formation, and Lightly Doped Drain implantation in our process simulation. We have validated the electrical performance of the device by plotting and analyzing the I_D-V_g relationship.

Keywords

MOSFET; ion implantation; mixers (circuits); semiconductor device metallisation; SILVACO TCAD tools; constant field scaling; effective channel length; electrical characterization; fabrication process; gate oxide thickness; ion implantation density; light doped drain implantation; metallization; mixer circuits; shallow trench isolation; short channel effects; sidewall spacer deposition; submicron PMOS characterization; threshold voltage adjustment; Annealing; Boron; Logic gates; Metallization; Silicides;

fLanguage

English

Publisher

ieee

Conference_Titel

Sustainable Utilization and Development in Engineering and Technology (STUDENT), 2010 IEEE Conference on

Conference_Location

Petaling Jaya

Print_ISBN

978-1-4244-7504-9

Type

conf

DOI

10.1109/STUDENT.2010.5686992

Filename

5686992