Internal structure optimization of a DAR IMPATT diode for high frequency band

Author

Zemliak, A. ; Cabrera, S. ; Machusskiy, E.

Author_Institution

Dept. of Phys. & Math., Puebla Autonomous Univ., Puebla

fYear

2008

fDate

11-14 May 2008

Firstpage

225

Lastpage

228

Abstract

The analysis and optimization of the n "pvnp" avalanche diode have been realized on basis of the nonlinear model and special optimization procedure. This type of the diode that was named as double avalanche region (DAR) IMPATT diode includes two avalanche regions inside the diode. The phase delay, which was produced by means of the two avalanche regions and the drift region v, is sufficient to obtain the negative resistance for the wide frequency band. The admittance and energy characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz. Output power level was optimized for the second frequency band near the 220 GHz.

Keywords

IMPATT diodes; microwave diodes; millimetre wave diodes; submillimetre wave diodes; admittance-energy characteristics; avalanche diodes; double avalanche region; drift region; frequency 30 GHz to 360 GHz; high frequency band; internal structure optimization; nonlinear model; phase delay; Boundary conditions; Charge carrier processes; Delay effects; Mathematics; Nonlinear equations; Physics; Poisson equations; Power generation; Radio frequency; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2008. MIEL 2008. 26th International Conference on

Conference_Location

Nis

Print_ISBN

978-1-4244-1881-7

Electronic_ISBN

978-1-4244-1882-4

Type

conf

DOI

10.1109/ICMEL.2008.4559264

Filename

4559264