Characterization of nano-meter scale roughness of CVD silicon and silicon dioxide films for 3-D device integration

Author

Ilhan, H. Tolga ; Nasrullah, Jawad ; Linscott, Ivan ; Tyler, G. Leonard

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA, USA

Volume

2

fYear

2003

fDate

12-14 Aug. 2003

Firstpage

539

Abstract

A wavelet-based approach for characterization of surface roughness of thin films of Si and SiO₂, describes a local sharp variation in atomic force microscope (AFM) scans as a combination of local Holder exponent and summit decay rate. Increased deposition time, in combination with higher nucleation rate, and etched-back low pressure chemical vapor deposition (LPCVD) films result in increasingly smooth summits and less overall roughness. No roughness dependence on surface cleaning method is observed.

Keywords

CVD coatings; atomic force microscopy; elemental semiconductors; nanotechnology; nucleation; semiconductor process modelling; semiconductor thin films; silicon; silicon compounds; surface cleaning; surface roughness; wavelet transforms; 3D device integration; AFM; CVD silicon films; LPCVD films; Si; Si thin films; SiO₂; SiO₂ thin films; atomic force microscopy; deposition time; etched back low pressure chemical vapor deposition films; local Holder exponent; local sharp variation; nanometer scale roughness; nucleation rate; silicon dioxide films; summit decay rate; surface cleaning method; surface roughness; wavelet analysis; Atomic force microscopy; Atomic layer deposition; Nanoscale devices; Rough surfaces; Semiconductor films; Semiconductor thin films; Silicon compounds; Surface cleaning; Surface roughness; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on

Print_ISBN

0-7803-7976-4

Type

conf

DOI

10.1109/NANO.2003.1230966

Filename

1230966