Surface recristallization of CdS layers by pulsed - laser annealing

Author

Shindov, P. ; Kakanakov, R. ; Kolaklieva, L. ; Kaneva, Sv ; Anastasova, T.

Author_Institution

Dept. of Electron., Tech. Univ. - Sofia, Plovdiv

fYear

2008

fDate

11-14 May 2008

Firstpage

243

Lastpage

246

Abstract

Properties of spry pyrolysed CdS layers were changed purposefully using annealing by a pulsed-laser in oxygen ambient. The structural, phase and electrical characteristics before and after annealing have been compared. The layer surface has been studied by SEM, XRD and XPS analyses. The electrical and optic parameters have been measured as well. Layers with different structure and electro-optical characteristics have been obtained by changing the conditions of the subsequent treatment. The pulsed-laser annealing in the oxygen ambient leaded to partial oxidation of the polycrystalline layers and forming a photosensitive CdS - CdO structure. A correlation between the technological condition and the layer parameters has been found.

Keywords

II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; cadmium compounds; electro-optical effects; laser beam annealing; recrystallisation; scanning electron microscopy; semiconductor thin films; surface composition; wide band gap semiconductors; CdS; SEM; XPS; XRD; electro optical effects; pulsed-laser annealing; surface composition; surface recrystallization; surface structure; Annealing; Laser transitions; Optical films; Optical pulses; Pulsed laser deposition; Scanning electron microscopy; Surface emitting lasers; Surface morphology; Surface treatment; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2008. MIEL 2008. 26th International Conference on

Conference_Location

Nis

Print_ISBN

978-1-4244-1881-7

Electronic_ISBN

978-1-4244-1882-4

Type

conf

DOI

10.1109/ICMEL.2008.4559269

Filename

4559269