• DocumentCode
    2058739
  • Title

    A nanochannel fabrication technique using chemical-mechanical polishing (CMP) and thermal oxidation

  • Author

    Lee, Choonsup ; Yang, E.H. ; Myung, N.V. ; George, T.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    2
  • fYear
    2003
  • fDate
    12-14 Aug. 2003
  • Firstpage
    553
  • Abstract
    We have developed a new nanochannel fabrication technique using chemical-mechanical polishing (CMP) and thermal oxidation. With this technique, it is possible to control the width, length, and depth of the nanochannels without the need for nanolithography. The use of sacrificial SiO2 layers allows the fabrication of centimeter-long nanochannels. In addition, the fabrication process is CMOS compatible. We have successfully fabricated an array of extremely long and narrow nanochannels (i.e. 10 mm long, 25 nm wide and 100 nm deep) with smooth inner surfaces.
  • Keywords
    CMOS integrated circuits; amorphous semiconductors; chemical mechanical polishing; elemental semiconductors; microfluidics; nanotechnology; oxidation; silicon; silicon compounds; 10 mm; 100 nm; 25 mm; CMOS compatible; CMP; Si; SiO2; SiO2 layers; bionanotechnology; chemical mechanical polishing; extremely small fluidic structures; inner surfaces; nano-fluidic system; nanochannel fabrication; nanolithography; sacrificial SiO2 layers; thermal oxidation; Amorphous silicon; CMOS process; Chemical technology; Etching; Lithography; Machining; Optical device fabrication; Oxidation; Semiconductor films; Thickness control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
  • Print_ISBN
    0-7803-7976-4
  • Type

    conf

  • DOI
    10.1109/NANO.2003.1230970
  • Filename
    1230970