DocumentCode
2058739
Title
A nanochannel fabrication technique using chemical-mechanical polishing (CMP) and thermal oxidation
Author
Lee, Choonsup ; Yang, E.H. ; Myung, N.V. ; George, T.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
2
fYear
2003
fDate
12-14 Aug. 2003
Firstpage
553
Abstract
We have developed a new nanochannel fabrication technique using chemical-mechanical polishing (CMP) and thermal oxidation. With this technique, it is possible to control the width, length, and depth of the nanochannels without the need for nanolithography. The use of sacrificial SiO2 layers allows the fabrication of centimeter-long nanochannels. In addition, the fabrication process is CMOS compatible. We have successfully fabricated an array of extremely long and narrow nanochannels (i.e. 10 mm long, 25 nm wide and 100 nm deep) with smooth inner surfaces.
Keywords
CMOS integrated circuits; amorphous semiconductors; chemical mechanical polishing; elemental semiconductors; microfluidics; nanotechnology; oxidation; silicon; silicon compounds; 10 mm; 100 nm; 25 mm; CMOS compatible; CMP; Si; SiO2; SiO2 layers; bionanotechnology; chemical mechanical polishing; extremely small fluidic structures; inner surfaces; nano-fluidic system; nanochannel fabrication; nanolithography; sacrificial SiO2 layers; thermal oxidation; Amorphous silicon; CMOS process; Chemical technology; Etching; Lithography; Machining; Optical device fabrication; Oxidation; Semiconductor films; Thickness control;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN
0-7803-7976-4
Type
conf
DOI
10.1109/NANO.2003.1230970
Filename
1230970
Link To Document