• DocumentCode
    2058799
  • Title

    Nano-optical CVD and nanophotolithography using an optical near-field nonresonant to electronic transition

  • Author

    Kawazoe, Tadashi ; Kobayashi, Kiyosi ; Ohtsu, Motoich

  • Author_Institution
    ERATO Localized Photon Project, Japan Sci. & Technol. Corp., Tokyo, Japan
  • Volume
    2
  • fYear
    2003
  • fDate
    12-14 Aug. 2003
  • Firstpage
    561
  • Abstract
    In near-field optical chemical vapor deposition (NFO-CVD), photo dissociation can take place under nonresonant conditions, i.e., with visible light, due to the inherent properties of the optical near field. We succeeded the deposition of the nanometric Zn dots 70 nm wide and 24 nm high by NFO-CVD using the metal-organic gas Zn(acac)2, which is not usually used for conventional optical CVD due to its low optical activity. This technique makes it possible to use various light and gas sources to deposit a variety of nanometric materials. This peculiar photochemical reaction of an optical near field is not limited to optical CVD, but can be applied to general photochemical reactions. We demonstrate near-field photolithography using a 532 nm laser. The pattern fabricated on photoresist was 150 nm wide and 25 nm deep.
  • Keywords
    chemical vapour deposition; nanostructured materials; nanotechnology; photochemistry; photodissociation; photoresists; zinc; 150 nm; 24 nm; 25 nm; 532 nm; 70 nm; Zn; gas sources; nanometric Zn dots; nanometric materials; nanooptical CVD; nanophotolithography; near field optical chemical vapor deposition; near field photolithography; nonresonant conditions; optical activity; optical near field nonresonant-electronic transition; photo dissociation; photochemical reaction; photoresist; visible light; Atom optics; Chemical vapor deposition; Electron optics; Gas lasers; Lithography; Nonlinear optics; Optical harmonic generation; Optical microscopy; Photochemistry; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
  • Print_ISBN
    0-7803-7976-4
  • Type

    conf

  • DOI
    10.1109/NANO.2003.1230972
  • Filename
    1230972