A compensation threshold voltage shift pixel circuit for active matrix organic light emitting diode

Author

Lin, Jyi-Tsong ; Wen, Cheng-Neng ; Lin, Po-Hsieh

Author_Institution

Dept. of EE, Nat. Sun Yat-Sen Univ., Kaohsiung

fYear

2008

fDate

11-14 May 2008

Firstpage

259

Lastpage

262

Abstract

In this paper, we propose a new Voltage- programming pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) for an active matrix organic light-emitting diode (AMOLED). The proposed a-Si:H TFT pixel circuit, which consists of four p-type switching TFTs, one n-type driving TFT, two additional control signals and one storage capacitor, successfully compensated the OLED current fluctuation caused by threshold voltage shift of a-Si:H TFT and the drop on the supply voltage, the propose pixel circuit has been verified by the simulation work using HSPICE software, the simulation result show that this pixel circuit has high immunity to the variation of a-Si:H TFT characteristics.

Keywords

LED displays; SPICE; capacitor storage; current fluctuations; driver circuits; elemental semiconductors; organic light emitting diodes; semiconductor thin films; silicon; thin film transistors; HSPICE; active matrix OLED displays; active matrix organic light-emitting diode; current fluctuation; hydrogenated amorphous silicon thin-film transistors; pixel driving circuit; storage capacitor; threshold voltage shift; voltage-programming pixel circuit; Active matrix organic light emitting diodes; Amorphous silicon; Circuit simulation; Fluctuations; Organic light emitting diodes; Switched capacitor circuits; Switching circuits; Thin film transistors; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2008. MIEL 2008. 26th International Conference on

Conference_Location

Nis

Print_ISBN

978-1-4244-1881-7

Electronic_ISBN

978-1-4244-1882-4

Type

conf

DOI

10.1109/ICMEL.2008.4559273

Filename

4559273