DocumentCode
2058844
Title
Transistor with electrically induced quantum wire channel
Author
Baik, Seung Jae ; Choi, Siyoung ; Chung, U-In ; Moon, Joo Tae
Author_Institution
Process Dev. Team, Samsung Electron. Co. Ltd, Yongin, South Korea
Volume
2
fYear
2003
fDate
12-14 Aug. 2003
Firstpage
565
Abstract
Quantum wire was electrically realized using conventional Si process technology. Channel lateral junction and gate bias induced surface band bending resulted in potential well. MOSFET with hole channel of this wire-like potential exhibited conductance oscillation, which was explained by subbands formation in the twin well at the lateral junction. Potential confinement in two dimensions also caused high photo-sensitivity in this device.
Keywords
MOSFET; semiconductor device models; semiconductor quantum wires; sensitivity; MOSFET; channel lateral junction; conductance oscillation; electrically induced quantum wire channel; gate bias induced surface band bending; hole channel; photosensitivity; potential confinement; potential well; subbands formation; transistor; Doping; Fluctuations; Lithography; MOSFETs; Nanocrystals; Nonvolatile memory; Potential well; Temperature; Transistors; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN
0-7803-7976-4
Type
conf
DOI
10.1109/NANO.2003.1230973
Filename
1230973
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