DocumentCode :
2058959
Title :
Influence of fluorine contamination on semiconductor wafer probing
Author :
Reinl, M. ; Lindner, T. Stimpel ; Sulima, T. ; Eisele, I. ; Nagler, O. ; Kaesen, F.
Author_Institution :
Inst. of Phys., Univ. der Bunderwehr Munich, Munich
fYear :
2008
fDate :
11-14 May 2008
Firstpage :
283
Lastpage :
286
Abstract :
Probing over active area (POAA) is gaining more influence in modern semiconductor production. Because of the existing bonding technology aluminum is still used as last metal layer. Whereas it is assumed that the problems during probing are mainly caused by the native aluminum oxide on the pad surface we will show, that other contaminations must be considered as well, especially fluorine. A possible cleaning step to improve the probing performance will be shown and discussed.
Keywords :
monolithic integrated circuits; Probing over active area; aluminum oxide; fluorine contamination; semiconductor production; semiconductor wafer probing; Aluminum oxide; Contacts; Contamination; Electric variables measurement; Force measurement; Force sensors; Gold; Plasma measurements; Pollution measurement; Production;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-1881-7
Electronic_ISBN :
978-1-4244-1882-4
Type :
conf
DOI :
10.1109/ICMEL.2008.4559279
Filename :
4559279
Link To Document :
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