• DocumentCode
    2059255
  • Title

    Theory of nanotube opto-electromechanical device

  • Author

    Rotkin, SIava V.

  • Author_Institution
    Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
  • Volume
    2
  • fYear
    2003
  • fDate
    12-14 Aug. 2003
  • Firstpage
    631
  • Abstract
    Theory of a novel carbon nanotube opto-electronic switch is presented. Current control is realized at the molecular level by applying field of an atomic charge or atomic dipole across the nanotube channel, which can work as a local gate. In the case of a unit (1 e) point charge, close to the surface, a scattering potential strength is ∼2 eV if neglecting the screening. Thus, the screened potential has to be used and it is ∼0.1 eV for a SWNT with typical parameters. In case of the dipole scatterer, the potential is approximately 10 times weaker. The change of the dipole orientation with respect to the channel axis modulates the potential shape from a single barrier/well to a coupled triangular barrier and well. A possibility for creating a light-controlled electronic device is discussed.
  • Keywords
    carbon nanotubes; electro-optical switches; field effect transistors; nanotube devices; potential scattering; C; atomic charge; atomic dipole; carbon nanotube optoelectronic switch; dipole orientation; dipole scatterer; molecular FET; nanotube channel; nanotube optoelectromechanical device; point charge; scattering potential strength; screening; Chemicals; Current control; Electrostatics; FETs; Light scattering; Nanoscale devices; Optical scattering; Particle scattering; Switches; Tail;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
  • Print_ISBN
    0-7803-7976-4
  • Type

    conf

  • DOI
    10.1109/NANO.2003.1230991
  • Filename
    1230991