DocumentCode
2059255
Title
Theory of nanotube opto-electromechanical device
Author
Rotkin, SIava V.
Author_Institution
Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
Volume
2
fYear
2003
fDate
12-14 Aug. 2003
Firstpage
631
Abstract
Theory of a novel carbon nanotube opto-electronic switch is presented. Current control is realized at the molecular level by applying field of an atomic charge or atomic dipole across the nanotube channel, which can work as a local gate. In the case of a unit (1 e) point charge, close to the surface, a scattering potential strength is ∼2 eV if neglecting the screening. Thus, the screened potential has to be used and it is ∼0.1 eV for a SWNT with typical parameters. In case of the dipole scatterer, the potential is approximately 10 times weaker. The change of the dipole orientation with respect to the channel axis modulates the potential shape from a single barrier/well to a coupled triangular barrier and well. A possibility for creating a light-controlled electronic device is discussed.
Keywords
carbon nanotubes; electro-optical switches; field effect transistors; nanotube devices; potential scattering; C; atomic charge; atomic dipole; carbon nanotube optoelectronic switch; dipole orientation; dipole scatterer; molecular FET; nanotube channel; nanotube optoelectromechanical device; point charge; scattering potential strength; screening; Chemicals; Current control; Electrostatics; FETs; Light scattering; Nanoscale devices; Optical scattering; Particle scattering; Switches; Tail;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN
0-7803-7976-4
Type
conf
DOI
10.1109/NANO.2003.1230991
Filename
1230991
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