DocumentCode
2059671
Title
Fracture Properties of Thermal Silicon Oxide Thin Films from the Load-Deflection of Long SiNx/SiO2 Membranes
Author
Yang, Jinling ; Paul, Oliver
Author_Institution
IMTEK, Freiburg Univ.
fYear
2006
fDate
18-21 Jan. 2006
Firstpage
1362
Lastpage
1367
Abstract
The bulge test was successfully extended to the determination of the fracture properties of silicon oxide/silicon nitride thin film sandwiches. This was achieved by using long membranes and applying a comprehensive mechanical model describing the mechanical response of these membranes deflected into a plane-strain deflection profile under a differential pressure. The model is able to cope with thin films with arbitrary z-dependent prestress and plane-strain modulus, where z denotes the coordinate perpendicular to the membrane. It consistently takes into account the bending rigidity and the stretching stiffness of the layered material and enables accurate calculations of the load-deflection response and of the stress distribution throughout the composite membrane as a function of the load, and in particular at the critical pressure leading to the fracture of the membranes. The method was applied to six different types of membranes made of 300-nm-thick LPCVD silicon nitride and 450-nm-thick to 980-nm-thick thermal silicon oxide films produced at 950 deg C and at 1000 deg C. Extracted prestress levels, plane-strain moduli, and fracture stresses are 0.97 plusmn 0.05 GPa, 301.7 plusmn 36.1 GPa, and 9.7 plusmn 0.3 GPa, respectively, for the LPCVD silicon nitride. For the silicon oxide -236.5 plusmn 49.0 MPa, 69.8 plusmn 46.1 GPa, and 0.8 GPa to 1.48 GPa were found for the prestress, plane-strain modulus, and fracture stress, respectively
Keywords
bending; chemical vapour deposition; composite materials; elasticity; fracture; inhomogeneous media; membranes; sandwich structures; shear modulus; silicon compounds; thin films; 1000 C; 300 nm; 450 to 980 nm; 950 C; LPCVD; SiN-SiO2; bending rigidity; bulge test; composite membrane; fracture property; fracture stresses; load-deflection; low pressure chemical vapor deposition; membranes; plane-strain deflection profile; plane-strain moduli; plane-strain modulus; prestress levels; prestress modulus; silicon oxide-silicon nitride thin film sandwiches; stretching stiffness; thermal silicon oxide thin films; Analytical models; Biomembranes; Materials testing; Mechanical factors; Semiconductor device modeling; Semiconductor thin films; Silicon; Thermal loading; Thermal stresses; Transistors; bulge test; fracture stress; silicon oxide; strength; thin film;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems, 2006. NEMS '06. 1st IEEE International Conference on
Conference_Location
Zhuhai
Print_ISBN
1-4244-0139-9
Electronic_ISBN
1-4244-0140-2
Type
conf
DOI
10.1109/NEMS.2006.334749
Filename
4135197
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