Title :
1.3 Analog CMOS from 5 micrometer to 5 nanometer
Author_Institution :
Katholieke Univ. Leuven, Leuven, Belgium
Abstract :
In our future, as usual, analog designers will continue to expand their expertise and knowledge in response to changing needs. While devices will change their nature and operate at higher and higher frequencies, their I-V characteristics will remain similar. In the near term, increased speed of MOS circuits, will be reached by operating deeper in weak inversion. Offset and 1/f noise will continue to play a critical role. Thus, in general, it seems that analog expertise is insensitive to technology change.
Keywords :
CMOS analogue integrated circuits; integrated circuit design; I-V characteristics; analog CMOS integrated circuit; analog designers; analog expertise; size 5 mum; size 5 nm; CMOS integrated circuits; Capacitance; FinFETs; Logic gates;
Conference_Titel :
Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-6223-5
DOI :
10.1109/ISSCC.2015.7062848
