DocumentCode
2059722
Title
1.3 Analog CMOS from 5 micrometer to 5 nanometer
Author
Sansen, Willy
Author_Institution
Katholieke Univ. Leuven, Leuven, Belgium
fYear
2015
fDate
22-26 Feb. 2015
Firstpage
1
Lastpage
6
Abstract
In our future, as usual, analog designers will continue to expand their expertise and knowledge in response to changing needs. While devices will change their nature and operate at higher and higher frequencies, their I-V characteristics will remain similar. In the near term, increased speed of MOS circuits, will be reached by operating deeper in weak inversion. Offset and 1/f noise will continue to play a critical role. Thus, in general, it seems that analog expertise is insensitive to technology change.
Keywords
CMOS analogue integrated circuits; integrated circuit design; I-V characteristics; analog CMOS integrated circuit; analog designers; analog expertise; size 5 mum; size 5 nm; CMOS integrated circuits; Capacitance; FinFETs; Logic gates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
Conference_Location
San Francisco, CA
Print_ISBN
978-1-4799-6223-5
Type
conf
DOI
10.1109/ISSCC.2015.7062848
Filename
7062848
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