• DocumentCode
    2059722
  • Title

    1.3 Analog CMOS from 5 micrometer to 5 nanometer

  • Author

    Sansen, Willy

  • Author_Institution
    Katholieke Univ. Leuven, Leuven, Belgium
  • fYear
    2015
  • fDate
    22-26 Feb. 2015
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    In our future, as usual, analog designers will continue to expand their expertise and knowledge in response to changing needs. While devices will change their nature and operate at higher and higher frequencies, their I-V characteristics will remain similar. In the near term, increased speed of MOS circuits, will be reached by operating deeper in weak inversion. Offset and 1/f noise will continue to play a critical role. Thus, in general, it seems that analog expertise is insensitive to technology change.
  • Keywords
    CMOS analogue integrated circuits; integrated circuit design; I-V characteristics; analog CMOS integrated circuit; analog designers; analog expertise; size 5 mum; size 5 nm; CMOS integrated circuits; Capacitance; FinFETs; Logic gates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    978-1-4799-6223-5
  • Type

    conf

  • DOI
    10.1109/ISSCC.2015.7062848
  • Filename
    7062848