Impact of V/III ratio on GaN growth by HVPE

Author

Yu, H.Q. ; Chen, L. ; Zhang, R. ; Xiu, X.Q. ; Xie, Z.L. ; Ye, Y.D. ; Gu, S.L. ; Shen, B. ; Shi, Y. ; Zheng, Y.D.

Author_Institution

Dept. of Phys., Nanjing Univ., China

fYear

2004

fDate

20-25 Sept. 2004

Firstpage

41

Lastpage

44

Abstract

Thick GaN films grown with different V/III ratio on sapphire by hydride vapour phase epitaxy have been investigated. The V/III ratio is changed from 240 to 30. All the GaN films, which are n type, show only (0002) oriented peak and have the band emission with no yellow luminescence bands. When V/III ratio is 30, the full width at half maximum of (0002) X-ray rocking curve is the smallest, line-width of the band edge emission is narrow, the surface morphology shows step-flow growth and the growth rate is the highest.

Keywords

III-V semiconductors; X-ray spectra; chemical vapour deposition; gallium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; surface morphology; vapour phase epitaxial growth; wide band gap semiconductors; Al₂O₃; GaN; GaN films; GaN growth; HVPE; V/III ratio; X-ray rocking curve; band edge emission; hydride vapour phase epitaxy; luminescence bands; step-flow growth; surface morphology; Atomic measurements; Crystals; Epitaxial growth; Gallium nitride; Inductors; Light emitting diodes; Luminescence; Nitrogen; Substrates; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on

Print_ISBN

0-7803-8668-X

Type

conf

DOI

10.1109/SIM.2005.1511381

Filename

1511381