Title :
Study of unintentionally doped GaN grown on SiC by Laplace defect spectroscopy
Author :
Zhan, Huahan ; Kang, Junyong
Author_Institution :
Dept. of Phys., Xiamen Univ., China
Abstract :
High resolution Laplace defect spectroscopic study of unintentionally doped GaN grown on SiC (0001) by plasma-assisted MBE is presented. We observed four deep levels El (0.25 eV), E2 (0.62 eV), E3 (0.80 eV), E4 (0.90 eV), and a group (around 0.95 eV) in the electron emission measurements.
Keywords :
III-V semiconductors; deep levels; defect absorption spectra; gallium compounds; semiconductor doping; wide band gap semiconductors; SiC; deep levels; electron emission; high resolution Laplace defect spectroscopy; plasma-assisted MBE; unintentionally doped GaN; Capacitance; Electron emission; Gallium nitride; Optical sensors; Plasma measurements; Plasma temperature; Silicon carbide; Spatial resolution; Spectroscopy; Stimulated emission;
Conference_Titel :
Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
Print_ISBN :
0-7803-8668-X
DOI :
10.1109/SIM.2005.1511382
