Cubic InGaN/GaN multiple quantum wells and AlGaN/GaN Bragg reflectors for green resonant cavity LED

High quality cubic InGaN/GaN multi-quantum wells (MQWs) were grown with clearly resolved superlattice peaks in high resolution X-ray diffraction. We show that during a growth interruption between InGaN well and GaN barrier growth, In atoms segregated at the InGaN surface can evaporate. This procedure results in room temperature photoluminescence (PL) emission with full width at half maximum (FWHM) of 240 meV. Distributed c-AlGaN/GaN Bragg reflectors (DBR) which consist of 15 layer stacks have a maximum reflectivity of about 50% at 514 nm and a stop band width of 33 nm. Enhanced 526 nm room temperature PL emission has been observed from a λ cavity with c-InGaN/GaN MQWs active layer grown on 12 stacks backside AlGaN/GaN DBR.