DocumentCode :
2059957
Title :
ZnO films deposited by RF magnetron sputtering
Author :
Li, Jing ; Wu, Suntao ; Kang, Junyong
Author_Institution :
Dept. of Phys., Xiamen Univ., China
fYear :
2004
fDate :
20-25 Sept. 2004
Firstpage :
77
Lastpage :
80
Abstract :
ZnO nano films were deposited on p-Si(100) with different pre-deposited buffer layers by RF magnetron sputtering system under different processing conditions. The film surface morphology and crystal structure were characterized by scanning electron microscopy, atomic force microscopy, and X-ray diffraction. The results demonstrate that the grain sizes of ZnO films vary from 6-100 nm under different processing conditions. The film with the thickness about 300 nm was formed by ZnO nano-pillars dominantly orientated in c-axis direction. Moreover, the film surfaces are very smooth and homogeneous.
Keywords :
II-VI semiconductors; X-ray diffraction; atomic force microscopy; crystal structure; grain size; nanostructured materials; scanning electron microscopy; semiconductor growth; semiconductor thin films; sputtered coatings; surface morphology; wide band gap semiconductors; zinc compounds; RF magnetron sputtering; Si; X-ray diffraction; ZnO; ZnO nano films; atomic force microscopy; buffer layers; crystal structure; film surface morphology; grain sizes; scanning electron microscopy; Atomic force microscopy; Atomic layer deposition; Buffer layers; Grain size; Radio frequency; Scanning electron microscopy; Sputtering; Surface morphology; X-ray diffraction; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
Print_ISBN :
0-7803-8668-X
Type :
conf
DOI :
10.1109/SIM.2005.1511390
Filename :
1511390
Link To Document :
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