• DocumentCode
    2059957
  • Title

    ZnO films deposited by RF magnetron sputtering

  • Author

    Li, Jing ; Wu, Suntao ; Kang, Junyong

  • Author_Institution
    Dept. of Phys., Xiamen Univ., China
  • fYear
    2004
  • fDate
    20-25 Sept. 2004
  • Firstpage
    77
  • Lastpage
    80
  • Abstract
    ZnO nano films were deposited on p-Si(100) with different pre-deposited buffer layers by RF magnetron sputtering system under different processing conditions. The film surface morphology and crystal structure were characterized by scanning electron microscopy, atomic force microscopy, and X-ray diffraction. The results demonstrate that the grain sizes of ZnO films vary from 6-100 nm under different processing conditions. The film with the thickness about 300 nm was formed by ZnO nano-pillars dominantly orientated in c-axis direction. Moreover, the film surfaces are very smooth and homogeneous.
  • Keywords
    II-VI semiconductors; X-ray diffraction; atomic force microscopy; crystal structure; grain size; nanostructured materials; scanning electron microscopy; semiconductor growth; semiconductor thin films; sputtered coatings; surface morphology; wide band gap semiconductors; zinc compounds; RF magnetron sputtering; Si; X-ray diffraction; ZnO; ZnO nano films; atomic force microscopy; buffer layers; crystal structure; film surface morphology; grain sizes; scanning electron microscopy; Atomic force microscopy; Atomic layer deposition; Buffer layers; Grain size; Radio frequency; Scanning electron microscopy; Sputtering; Surface morphology; X-ray diffraction; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
  • Print_ISBN
    0-7803-8668-X
  • Type

    conf

  • DOI
    10.1109/SIM.2005.1511390
  • Filename
    1511390