Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Single-crystal 3C-SiC films has been deposited on Si(111) substrates in a hot-wall chemical vapor deposition system. The temperature range for growing the SiC films is from 1030°C to 1130°C. The reaction precursors are SiH₄ and C₂H₄, while H₂ is the carrier gas. The effect of the partial pressure of ethene P_C2H4 on the film quality has been investigated by X-ray diffractometry and Raman scattering. Within the P_C2H4 range in this work, the higher P_C2H4 could help to improve the quality of 3C-SiC films. The thickness and refractive index of films was measured with spectroscopic ellipsometry. The effect of P_C2H4 on the growth rate is also explained with the reported standpoint of the initial deposition process.