DocumentCode
2060033
Title
A novel vertical sidewall MOSFET using smart source/body contact without floating-body effect
Author
Lee, Tai-Yi ; Lin, Jyi-Tsong ; Lin, Po-Hsieh ; Eng, Yi-Chuen ; Lin, Kao-Cheng
Author_Institution
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung
fYear
2008
fDate
11-14 May 2008
Firstpage
481
Lastpage
484
Abstract
In this paper, we present a new vertical MOS device having smart source/body contact (SSBVMOS). This vertical sidewall MOSFET possesses vertical channel, sidewall gate, and body passway which allow the conduction of both the generated carriers and heat. Thus, the fabricated device can achieve low self-heating effect and good suppression of the floating body effect without occupying excessive area.
Keywords
MOSFET; MOS device; floating-body effect suppression; self-heating effect; smart source-body contact; vertical sidewall MOSFET; CMOS technology; Contacts; Etching; Leakage current; Lithography; MOS devices; MOSFET circuits; Microelectronics; Plasma temperature; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location
Nis
Print_ISBN
978-1-4244-1881-7
Electronic_ISBN
978-1-4244-1882-4
Type
conf
DOI
10.1109/ICMEL.2008.4559326
Filename
4559326
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