Title :
A novel vertical sidewall MOSFET using smart source/body contact without floating-body effect
Author :
Lee, Tai-Yi ; Lin, Jyi-Tsong ; Lin, Po-Hsieh ; Eng, Yi-Chuen ; Lin, Kao-Cheng
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung
Abstract :
In this paper, we present a new vertical MOS device having smart source/body contact (SSBVMOS). This vertical sidewall MOSFET possesses vertical channel, sidewall gate, and body passway which allow the conduction of both the generated carriers and heat. Thus, the fabricated device can achieve low self-heating effect and good suppression of the floating body effect without occupying excessive area.
Keywords :
MOSFET; MOS device; floating-body effect suppression; self-heating effect; smart source-body contact; vertical sidewall MOSFET; CMOS technology; Contacts; Etching; Leakage current; Lithography; MOS devices; MOSFET circuits; Microelectronics; Plasma temperature; Silicon on insulator technology;
Conference_Titel :
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-1881-7
Electronic_ISBN :
978-1-4244-1882-4
DOI :
10.1109/ICMEL.2008.4559326
