N doped a-SiC:H films deposited by PECVD and annealed by pulse electron beam

Nitrogen-doped amorphous silicon carbide films were grown by a plasma enhanced chemical vapour deposition (PECVD) technique. The actual amount of nitrogen in the SiC films was determined by Rutherford backscattering spectrometry (RBS). For irradiation experiments we used electron beams with a kinetic energy 200 keV, a pulse duration of 300 ns, and a beam current of 150 A/cm². It was found that with increased nitrogen doping and following activation of dopants the resistivity of the amorphous SiC films was substantially reduced.