Analysis of carbon nanotube intramolecular p-n tunnel junction transistors

Author

Richardson, W.H.

Volume

2

fYear

2003

fDate

12-14 Aug. 2003

Firstpage

753

Abstract

A theory of intramolecular p-n junction transistors that is based on mesoscopic material parameters is presented. The tunneling rate across each junction was calculated using, the Matsubara-Green´s function technique. Characteristics of the transistor such as gain, output voltage versus current, and output voltage versus input voltage were calculated. The results of the theory are compared with experimental data. Our formalism also predicts new features such as voltage steps in the negative differential region of the current-voltage characteristics, and a device with current limiting features.

Keywords

Green´s function methods; carbon nanotubes; negative resistance; p-n junctions; semiconductor device models; single electron transistors; C; Matsubara-Green´s function technique; carbon nanotube intramolecular p-n tunnel junction transistors; current limiting features; current-voltage characteristics; mesoscopic material parameters; negative differential region; transistor gain; tunneling rate; voltage steps; Carbon nanotubes; Circuits; Contacts; Current-voltage characteristics; Electrostatics; FETs; P-n junctions; Single electron transistors; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on

Print_ISBN

0-7803-7976-4

Type

conf

DOI

10.1109/NANO.2003.1231022

Filename

1231022