Self-aligned n-shaped source/drain ultra-thin SOI MOSFETs

What is silicon-on-insulator (SOI)? Why SOI? Because of the excellent short-channel effects (SCEs) immunity, SOI group is generally considered to be a very strong candidate in the end of the CMOS (complementary metal-oxide semiconductor) scaling, as compared to bulk silicon. This paper aims to propose a novel device architecture namely self-aligned (SA) Pi-shaped source/drain ultra-thin SOI MOS field-effect transistor (Pi-S/D UTSOI MOSFET). Although this approach is based on simulation, numerical simulations, it demonstrates the trends of electrical characteristics in the proposed structure. This work also illustrates the process simulation and the tradeoff between the self-heating and the short-channel behaviors which are two important attributes of the future scaled-down UTSOI devices.