DocumentCode
2060087
Title
Two-terminal Si-nanocrystal memory formed between the two metal layers
Author
Fujita, Shinobu ; Yasuda, Shin-ichi ; Abe, Keiko ; Sugiyama, Naoharu
Author_Institution
Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki, Japan
Volume
2
fYear
2003
fDate
12-14 Aug. 2003
Firstpage
760
Abstract
We propose MIM memory with Si-nanocrystals embedded in the insular has been demonstrateted. This memory is preferable for a nonvolatile memory cell that can be formed between the two metal layers of CMOS circuits and vertically stacked, since the device process is entirely compatible to Si device process.
Keywords
CMOS memory circuits; MIM devices; elemental semiconductors; nanostructured materials; silicon; CMOS circuits; MIM memory; Si; Si device process; metal layers; nonvolatile memory cell; two terminal Si nanocrystal memory; CMOS memory circuits; Electrons; Inorganic materials; Large scale integration; Magnetic materials; Metal-insulator structures; Nonvolatile memory; Random access memory; Read-write memory; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN
0-7803-7976-4
Type
conf
DOI
10.1109/NANO.2003.1231024
Filename
1231024
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