Title :
Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices
Author :
Xu, B. ; Wang, Z.G. ; Chen, Y.H. ; Jin, P. ; Ye, X.L. ; Liu, H.Y. ; Zhang, Z.Y. ; Shi, G.X. ; Zhang, C.L. ; Wang, Y.L. ; Liu, F.Q.
Author_Institution :
Key Lab. of Semicond. Mat. Sci., Chinese Acad. of Sci., Beijing, China
Abstract :
Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power, long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 μm, QD-LDs emitting in red-light range, 1.3 μm QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.
Keywords :
III-V semiconductors; luminescent devices; nanostructured materials; optoelectronic devices; quantum dot lasers; self-assembly; semiconductor growth; semiconductor quantum dots; semiconductor quantum wells; 1.3 mum; GaAs; III-V compound semiconductor nanostructures; density; emitting wavelength; long-lifetime quantum-dot laser-diodes; opto-electronic devices; quantum devices; quantum-dot super-luminescent diodes; self-assembly; Gallium arsenide; III-V semiconductor materials; Optical materials; Optoelectronic devices; Quantum dot lasers; Quantum dots; Self-assembly; Semiconductor lasers; Semiconductor materials; Size control;
Conference_Titel :
Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
Print_ISBN :
0-7803-8668-X
DOI :
10.1109/SIM.2005.1511398
