Title :
Electron transport in parallel interacting artificial molecules
Author :
Cosby, Ronald M. ; Hoffmann, James A. ; Joe, Yong S.
Author_Institution :
Dept. of Phys. & Astron., Ball State Univ., Muncie, IN, USA
Abstract :
The low-field conductance of interacting artificial molecular wires is simulated using a single-electron model. Coupled artificial molecules consisting of parallel chains of open quantum dots in a two-dimensional electron gas display a split-off molecular band with an energy separation that grows with the coupling strength. The position of the Fermi energy relative to the molecular band states plays a dominant role in determining the low-field conductance. The predicted conductance variation with coupling for dual five-atom molecular wires ranges from oscillatory to monotonic, depending on the Fermi energy. For electron energies near a resonant state, results imply that conductance measurements on molecules in parallel could vary significantly with the inter-molecular spacing.
Keywords :
Fermi level; III-V semiconductors; aluminium compounds; electric admittance; electronic structure; energy gap; gallium arsenide; gallium compounds; resonant states; semiconductor process modelling; semiconductor quantum dots; two-dimensional electron gas; wires (electric); AlGaAs; Fermi energy; GaAs; artificial molecules; coupling strength; dual five atom molecular wires; electron energies; electron transport; field conductance; inter-molecular spacing; molecular band; molecular band states; quantum dots; resonant state; single electron model; two dimensional electron gas; Astronomy; Concurrent computing; Couplings; Electrodes; Electrons; Energy measurement; Molecular electronics; Physics computing; Quantum dots; Wires;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231026