Structural and optical properties of columnar (In,Ga)As quantum dots on GaAs (100)

Author

He, Jinwei ; Offermans, Peter ; Koenrad, P.M. ; Gong, Qiuming ; Hamhuis, G.J. ; Wolter, J.H.

Author_Institution

EiTT/COBRA Inter-Univ. Res. Inst., Eindhoven Univ. of Technol., Netherlands

fYear

2004

fDate

20-25 Sept. 2004

Firstpage

125

Lastpage

130

Abstract

Control of the height of (In,Ga)As quantum dots (QDs) on GaAs (100) substrates is presented. Columnar (In,Ga)As QDs that are homogeneous both in composition and shape along the growth direction are created by molecular beam epitaxy. The columnar QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar QDs is controlled by varying the number of GaAs/InAs layers. With increased height the photoluminescence (PL) emission wavelength of the columnar QDs is red-shifted and the line width narrows. Uncapped columnar QDs (surface QDs) emit PL at a long peak wavelength of 1.45 μm at RT due to reduced compressive strain.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; red shift; semiconductor quantum dots; 1.45 mum; GaAs; InGaAs; compressive strain; molecular beam epitaxy; photoluminescence; quantum dots; red shift; Atomic force microscopy; Capacitive sensors; Gallium arsenide; Molecular beam epitaxial growth; Optical microscopy; Photoluminescence; Quantum dots; Shape; Substrates; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on

Print_ISBN

0-7803-8668-X

Type

conf

DOI

10.1109/SIM.2005.1511400

Filename

1511400