Title :
Fabrication of fully released aluminum nitride nanoresonators
Author :
Currano, L.J. ; Wickenden, A.E. ; Dubey, M.
Author_Institution :
Sensors & Electron. Devices Directorate, US Army Res. Lab., Adelphi, MD, USA
Abstract :
Piezoelectric aluminum nitride (AlN) clamped-clamped beam nanoresonators having widths as small as 250 nm have been fabricated. The devices consist of a SiO2 structural layer, a platinum bottom electrode, an AlN piezoelectrically active layer, and top platinum driving and sensing electrodes. An additional SiO2 layer is used for electrical isolation from the silicon substrate and between the top and bottom electrode traces.
Keywords :
III-V semiconductors; aluminium compounds; crystal resonators; micromechanical resonators; nanotechnology; piezoelectric materials; silicon compounds; wide band gap semiconductors; 250 nm; AlN; Si; SiO2; SiO2 structural layer; aluminum nitride nanoresonators; electrical isolation; piezoelectric aluminum nitride clamped-clamped beam nanoresonators; platinum bottom electrode; sensing electrodes; silicon substrate; Aluminum nitride; Capacitive sensors; Electrodes; Filtering; Lithography; Optical device fabrication; Optical resonators; Piezoelectric devices; Platinum; Resonator filters;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231029
