Title :
InGaAs/InAlAs FACQW Mach-Zehnder modulator
Author :
Fukuoka, M. ; Hariki, T. ; Tajitsu, S. ; Toya, T. ; Arakawa, T. ; Tada, K.
Author_Institution :
Yokohama Nat. Univ., Yokohama
Abstract :
Mach-Zehnder modulators with InGaAs FACQWs were successfully fabricated. For a device with a 0.5-mm long phase shifter, a half-wave voltage and extinction ratio were 3.7 V and 30 dB, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; optical modulation; optical phase shifters; semiconductor quantum wells; InGaAs-InAlAs; Mach-Zehnder modulators; extinction ratio; five-layer asymmetric coupled quantum well; half-wave voltage ratio; phase shifter; size 0.5 mm; voltage 3.7 V; Absorption; Chirp modulation; Erbium; Extinction ratio; Indium compounds; Indium gallium arsenide; Molecular beam epitaxial growth; Optical modulation; Phase shifters; Voltage;
Conference_Titel :
Optical Communication, 2008. ECOC 2008. 34th European Conference on
Conference_Location :
Brussels
Print_ISBN :
978-1-4244-2227-2
Electronic_ISBN :
978-1-4244-2228-9
DOI :
10.1109/ECOC.2008.4729468
