Title :
Catalyst synthesis and growth of indium nitride nanodots
Author :
Xie, Z.L. ; Zhang, Rong ; Bi, Z.X. ; Liu, B. ; Xiu, X.Q. ; Gu, S.L. ; Shen, B. ; Shi, Y. ; Zheng, Y.D.
Author_Institution :
Dept. of Phys., Nanjing Univ., China
Abstract :
The technique of indium droplets catalyst is used for the synthesis of InN nanodots on (0001) sapphire substrates via metalorganic chemical vapor deposition (MOCVD) technique using trimethyindium (TMIn: (CH3)3In) and NH3, The morphology evolution of the InN nanodots are studied by AFM. The structure of the prepared sample is characterized by X-ray diffraction (XRD) and Raman scattering. And the XPS has been used to investigate the elemental composition of InN nanodots. Our results demonstrate that In droplets catalyst MOCVD can be a very effective way to grow InN nanodots.
Keywords :
III-V semiconductors; MOCVD; Raman spectra; X-ray diffraction; X-ray photoelectron spectra; atomic force microscopy; catalysts; crystal morphology; indium compounds; nanostructured materials; semiconductor growth; semiconductor quantum dots; wide band gap semiconductors; AFM; Al2O3; InN; MOCVD; Raman scattering; X-ray diffraction; XPS; XRD; indium droplets catalyst; indium nitride nanodots; metalorganic chemical vapor deposition; morphology; Crystalline materials; Indium; Inorganic materials; MOCVD; Optical materials; Raman scattering; Substrates; Surface morphology; X-ray diffraction; X-ray scattering;
Conference_Titel :
Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
Print_ISBN :
0-7803-8668-X
DOI :
10.1109/SIM.2005.1511406
