• DocumentCode
    2060402
  • Title

    Effects of metal buffer layer on the morphology of the ZnO columns

  • Author

    Feng, Xia ; Yuan, Xiaoli ; Sekiguchi, Takashi ; Terauchi, Masami ; Tsunekawa, Shin ; Ito, Shun ; Kang, Junyong

  • Author_Institution
    Dept. of Phys. & Photonics Res. Lab., Xiamen Univ., China
  • fYear
    2004
  • fDate
    20-25 Sept. 2004
  • Firstpage
    156
  • Lastpage
    159
  • Abstract
    ZnO columns with different morphologies were grown on Au- and Cu-buffer layers deposited on Si substrates. This indicates that the metal buffer layer will affect the growth rates along different directions. The theoretical calculation shows that O atoms are favourably adsorbed on the hcp sites on both the Au (111) and the Cu (111) surfaces. However, the adsorbed Zn atoms are stabilized on the top site of the O atoms on the Au surface while they are favorable on the fee sites on the Cu surface. This suggests that the different morphologies initiate from the different adsorption sites of Zn atoms on the two metal surfaces.
  • Keywords
    II-VI semiconductors; adsorption; buffer layers; copper; crystal morphology; gold; semiconductor growth; surface treatment; wide band gap semiconductors; zinc compounds; Au; Cu; Si; ZnO; ZnO column morphology; adsorption; growth rates; metal buffer layers; Atomic layer deposition; Buffer layers; Crystal microstructure; Electrons; Inorganic materials; Optical surface waves; Substrates; Surface acoustic wave devices; Surface morphology; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
  • Print_ISBN
    0-7803-8668-X
  • Type

    conf

  • DOI
    10.1109/SIM.2005.1511407
  • Filename
    1511407