DocumentCode
2060402
Title
Effects of metal buffer layer on the morphology of the ZnO columns
Author
Feng, Xia ; Yuan, Xiaoli ; Sekiguchi, Takashi ; Terauchi, Masami ; Tsunekawa, Shin ; Ito, Shun ; Kang, Junyong
Author_Institution
Dept. of Phys. & Photonics Res. Lab., Xiamen Univ., China
fYear
2004
fDate
20-25 Sept. 2004
Firstpage
156
Lastpage
159
Abstract
ZnO columns with different morphologies were grown on Au- and Cu-buffer layers deposited on Si substrates. This indicates that the metal buffer layer will affect the growth rates along different directions. The theoretical calculation shows that O atoms are favourably adsorbed on the hcp sites on both the Au (111) and the Cu (111) surfaces. However, the adsorbed Zn atoms are stabilized on the top site of the O atoms on the Au surface while they are favorable on the fee sites on the Cu surface. This suggests that the different morphologies initiate from the different adsorption sites of Zn atoms on the two metal surfaces.
Keywords
II-VI semiconductors; adsorption; buffer layers; copper; crystal morphology; gold; semiconductor growth; surface treatment; wide band gap semiconductors; zinc compounds; Au; Cu; Si; ZnO; ZnO column morphology; adsorption; growth rates; metal buffer layers; Atomic layer deposition; Buffer layers; Crystal microstructure; Electrons; Inorganic materials; Optical surface waves; Substrates; Surface acoustic wave devices; Surface morphology; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
Print_ISBN
0-7803-8668-X
Type
conf
DOI
10.1109/SIM.2005.1511407
Filename
1511407
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