Synthesis of boron and boride compounds nanowire arrays by chemical vapor deposition

Author

Yang, Deren ; Sha, Jian ; Ma, Xiangyang ; Wang, Jun ; Niu, Junjie ; Deren Yang

Author_Institution

State Key Lab. of Silicon Mat., Zhejiang Univ., Hangzhou, China

fYear

2004

fDate

20-25 Sept. 2004

Firstpage

160

Lastpage

163

Abstract

Aligned single crystal boron nanowires (BNWs) were fabricated by CVD process in nano-channel Al₂O₃ (NCA) substrates at 800°C. Using boron nanowires as precursors, arrayed single crystal hexagonal MgB₂ nanowires were fabricated by reacting BNWs in NCA with Mg vapor in a sealed vacuum quartz tube. And it is indicated that the nanowires had a superconducting transition temperature (T_c) at ∼35 K. Mg₃B₂O₆ nanowires were fabricated in-situ at 950°C by reacting Mg, diborane and traces of oxygen. The growth mechanisms of these nanowires have been discussed.

Keywords

boron; chemical vapour deposition; magnesium compounds; nanowires; superconducting transition temperature; type II superconductors; Al₂O₃; B; CVD; Mg₃B₂O₆; MgB₂; boride compounds nanowire arrays; boron; chemical vapor deposition; sealed vacuum quartz tube; superconducting transition; Aluminum oxide; Boron; Chemical vapor deposition; Crystallization; Electron emission; Furnaces; Magnesium compounds; Physics; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on

Print_ISBN

0-7803-8668-X

Type

conf

DOI

10.1109/SIM.2005.1511408

Filename

1511408