A novel sulfide-assisted growth of silicon nano-wires

Author

Niu, Junjie ; Sha, Jian ; Liu, Zhihong ; Yu, Jun ; Su, Zixue ; Yang, Qing ; Yang, Deren

Author_Institution

State Key Lab. of Silicon Mat., Zhejiang Univ., Hangzhou, China

fYear

2004

fDate

20-25 Sept. 2004

Firstpage

164

Lastpage

167

Abstract

A large-scale SiNWs with the diameter of ∼20-30 nm and the length of tens of micrometers formed on silicon substrates using a novel evaporation of sulfides (sulphur and zinc sulfide) at ∼1080°C were synthesized; The source of SiNWs came from silicon wafers rather than silane gas as reported before. It was found that the tip of SiNWs contained sulfur, while the other positions of SiNWs did not. It is considered that the decomposition of SiS resulted in the formation of SiNWs. As referring to the oxygen-assisted growth model of SiNWs by evaporation of silicon oxide, a corresponding sulfide-assisted model was suggested.

Keywords

decomposition; elemental semiconductors; evaporation; nanowires; semiconductor growth; semiconductor quantum wires; silicon; Si; decomposition; evaporation; silicon nanowires; sulfide-assisted growth; Chemical lasers; Chemical technology; Electron emission; Furnaces; Nanowires; Scanning electron microscopy; Semiconductor device modeling; Silicon; Transmission electron microscopy; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on

Print_ISBN

0-7803-8668-X

Type

conf

DOI

10.1109/SIM.2005.1511409

Filename

1511409