A novel sulfide-assisted growth of silicon nano-wires

A large-scale SiNWs with the diameter of ∼20-30 nm and the length of tens of micrometers formed on silicon substrates using a novel evaporation of sulfides (sulphur and zinc sulfide) at ∼1080°C were synthesized; The source of SiNWs came from silicon wafers rather than silane gas as reported before. It was found that the tip of SiNWs contained sulfur, while the other positions of SiNWs did not. It is considered that the decomposition of SiS resulted in the formation of SiNWs. As referring to the oxygen-assisted growth model of SiNWs by evaporation of silicon oxide, a corresponding sulfide-assisted model was suggested.