Anomalous growth of carbon-coated nickel silicide nanowires

Author

Kee, K.S. ; Mo, Y.H. ; Nahm, K.S. ; Shim, H.W. ; Suh, E.K. ; Lee, S.H. ; Yu, S.G. ; Park, G.S.

Author_Institution

Nanomater. Res. Center, Chonbuk Nat. Univ., Chonju, South Korea

Volume

2

fYear

2003

fDate

12-14 Aug. 2003

Firstpage

819

Abstract

Carbon-coated nanowires were prepared on Ni catalyst loaded Si(100) wafer in an RF-CVD reactor. The nanowires grow straight with a length of more than 10 μm. The average diameter of the nanowires ranged in 20-40 nm. HRTEM, EDX, Raman, and XRD measurements demonstrated the nanowires were 30-40 nm diameter SiNi nanowires coated with a 1.5-1.7 nm carbon layer. The turn-on field of the C-coated NiSi nanowires was estimated to be ∼3.6 eV and a field-enhancing factor β of ∼1500. The catalytic growth mechanism of the SiNi nanowires was discussed on the basis of experimental results in this work.

Keywords

Raman spectra; X-ray chemical analysis; X-ray diffraction; carbon; chemical vapour deposition; field emission; nanowires; nickel compounds; transmission electron microscopy; 1.5 to 17 nm; 10 micron; 20 to 40 nm; C; C coated NiSi nanowires; EDX; HRTEM; Ni catalyst; NiSi; Raman spectra; Si(100) wafer; XRD; anomalous growth; carbon coated nickel silicide nanowires; carbon layer; catalytic growth mechanism; field enhancing factor; nanowires growth; radiofrequency CVD reactor; Carbon nanotubes; Chemical technology; Hydrogen; Inductors; Nanomaterials; Nanoscale devices; Nanowires; Nickel; Silicides; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on

Print_ISBN

0-7803-7976-4

Type

conf

DOI

10.1109/NANO.2003.1231040

Filename

1231040