1.55-μm GaInNAs/GaAs multiple quantum wells with GaInNAs quaternary barrier and space layer

Author

Liu, H.Y. ; Sun, H.D. ; Navaretti, P. ; Ng, J.S. ; Hopkinson, M. ; Clark, A.H. ; Dawson, M.D.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK

fYear

2004

fDate

20-25 Sept. 2004

Firstpage

189

Lastpage

193

Abstract

We present the 1.55-μm GaInNAs/GaAs multiple quantum well (QW) heterostructures with GaNAs or GaInNAs barrier and space layer (BSL). An enhancement of photoluminescence intensity and a remarkable reduction of emission linewidth of GaInNAs multiple QWs have been demonstrated by using GaInNAs quaternary BSL, instead of GaNAs BSL. These effects of GaInNAs BSL could be understood in term of the improvement of structural properties of GaInNAs QWs. These results present to us a variable approach to further developing GaAs-based light sources in the telecommunication wavelength range near 1.55 μm.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; nitrogen compounds; photoluminescence; semiconductor quantum wells; spectral line narrowing; ultraviolet sources; 1.55 mum; GaInNAs-GaAs; emission linewidth; light sources; multiple quantum well; photoluminescence; quaternary barrier; space layer; telecommunication wavelength; Gallium arsenide; Laser theory; Nitrogen; Photoluminescence; Power lasers; Quantum well lasers; Semiconductor lasers; Space technology; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on

Print_ISBN

0-7803-8668-X

Type

conf

DOI

10.1109/SIM.2005.1511415

Filename

1511415