Title :
Magnetoresistance in GaCrN-based ferromagnet/nonmagnet/ferromagnet trilayer structures
Author :
Zhou, Y.K. ; Kim, M.S. ; Kimura, S. ; Emura, S. ; Hasegawa, S. ; Asahi, H.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
Abstract :
GaCrN-based ferromagnet/nonmagnet/ferromagnet trilayer structures were grown by radio frequency molecular beam epitaxy. During GaN and GaCrN growth, reflection high-energy electron diffraction pattern showed thin streaks and Kikuchi lines, indicating surface flatness and high crystalline quality. Clear hysteresis and clear saturation characteristics were observed in the magnetization versus magnetic field curves at all measuring temperatures. The coercivity Hc was about 130 Oe at 10 K. Hysteresis loop was observed in the magnetic field dependence of vertical electrical resistance.
Keywords :
III-V semiconductors; chromium compounds; coercive force; electrical resistivity; electron diffraction crystallography; ferromagnetic materials; gallium compounds; magnetic hysteresis; magnetic multilayers; magnetoresistance; molecular beam epitaxial growth; surface structure; 10 K; GaCrN-GaN; Kikuchi lines; coercivity; crystalline quality; ferromagnet/nonmagnet/ferromagnet trilayers; hysteresis; magnetic field curves; magnetization; magnetoresistance; radio frequency molecular beam epitaxy; reflection high-energy electron diffraction; surface flatness; vertical electrical resistance; Crystallization; Diffraction; Electrons; Gallium nitride; Magnetic field measurement; Magnetic hysteresis; Magnetoresistance; Molecular beam epitaxial growth; Optical reflection; Radio frequency;
Conference_Titel :
Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
Print_ISBN :
0-7803-8668-X
DOI :
10.1109/SIM.2005.1511417
