Comparison of interdiffusion between single and stacked-layer InGaAs/GaAs quantum dots

Author

Lever, P. ; Fu, L. ; Tan, H.H. ; Jagadish, C. ; Reece, P. ; Gal, And M.

Author_Institution

Res. Sch. of Phys. Sci. & Eng., Australian Nat. Univ., Canberra, ACT, Australia

Volume

2

fYear

2003

fDate

12-14 Aug. 2003

Firstpage

852

Abstract

In this work both thermal interdiffusion and impurity free vacancy disordering were studied and compared between two different QDs structures. One consisted of a single layer QDs, and the other of three-stacked-layer QDs. Different interdiffusion behaviors were observed in these QD structures and were discussed as the effects of strain accumulation and the presence of grown-in defects in QD system.

Keywords

III-V semiconductors; chemical interdiffusion; dielectric materials; dielectric thin films; gallium arsenide; indium compounds; internal stresses; photoluminescence; semiconductor quantum dots; silicon compounds; thermal diffusion; vacancies (crystal); InGaAs-GaAs; InGaAs-GaAs-Si₃N₄; InGaAs-GaAs-SiO₂; QD structures; grown-in defects; impurity free vacancy disordering; photoluminescence; single layer InGaAs-GaAs quantum dots; stacked layer InGaAs-GaAs quantum dots; strain accumulation effect; thermal interdiffusion; Atomic layer deposition; Capacitive sensors; Dielectric films; Gallium arsenide; Impurities; Indium gallium arsenide; Monolithic integrated circuits; Optical films; Quantum dots; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on

Print_ISBN

0-7803-7976-4

Type

conf

DOI

10.1109/NANO.2003.1231048

Filename

1231048