DocumentCode
2060763
Title
Noise processes and their origin in Mg-doped GaN
Author
Seghier, Djelloul ; Gislason, Haflidi P.
Author_Institution
Inst. of Sci., Iceland Univ., Reykjavik, Iceland
fYear
2004
fDate
20-25 Sept. 2004
Firstpage
226
Lastpage
229
Abstract
We investigated p-type epitaxial GaN:Mg materials using low frequency noise spectroscopy. The noise signal consists of a generation-recombination related contribution and a 1/f tail the causes of which are incompletely understood. The magnitude of the 1/f noise is affected by defect traps located either in the bulk material or at the surface. The generation-recombination noise is attributed to a metastable DX-like center.
Keywords
1/f noise; III-V semiconductors; deep levels; electron traps; gallium compounds; magnesium; semiconductor epitaxial layers; wide band gap semiconductors; GaN:Mg; defect traps; low frequency noise spectroscopy; signal generation; signal recombination; Frequency; Gallium nitride; Low-frequency noise; Metastasis; Noise generators; Noise measurement; Semiconductor device noise; Spectroscopy; Tail; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
Print_ISBN
0-7803-8668-X
Type
conf
DOI
10.1109/SIM.2005.1511424
Filename
1511424
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