DocumentCode
2060827
Title
Deep-defect related generation-recombination noise in GaAs
Author
Seghier, D. ; Arinbjarnason, T.M. ; Gislason, H.P.
Author_Institution
Inst. of Sci., Iceland Univ., Reykjavik, Iceland
fYear
2004
fDate
20-25 Sept. 2004
Firstpage
234
Lastpage
237
Abstract
We report results from noise spectroscopy and deep level transient spectroscopy on silicon-doped GaAs. We observe generation-recombination noise components which originate from two deep defects. The centers are located throughout the material. A defect with an emission energy of 0.55 eV is found to be metastable. We attribute this center to a complex defect involving EL2 generated by the presence of silicon. Further measurements are in progress to elucidate the origin of the observed traps.
Keywords
III-V semiconductors; deep level transient spectroscopy; defect states; electron traps; electron-hole recombination; gallium arsenide; random noise; silicon; 0.55 eV; GaAs:Si; deep defects; deep level transient spectroscopy; emission energy; generation-recombination noise; noise spectroscopy; silicon-doped GaAs; traps; Fluctuations; Frequency; Gallium arsenide; Metastasis; Microscopy; Noise generators; Noise level; Silicon; Spectroscopy; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
Print_ISBN
0-7803-8668-X
Type
conf
DOI
10.1109/SIM.2005.1511426
Filename
1511426
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