Matrix model of spin transistor

The model of spin transistor has been proposed in our paper, which not only can amplify spin-flow but also may perform logic operation and manipulate quantum information. The model is a square matrix of order 3 by 3; a quantum matrix consisting of nine quantum dots. Elements of column 1 must be made up of different semiconductors to produce dissimilar carrier precessions. Column 2 is a ferromagnetic semiconductor, which has to accept carriers from column 1. Column 3 is also ferromagnetic semiconductor, but its elements must match in characteristics with their respective elements in column 1. Magnetic tunnel junction separates column 2 and column 3. In column 1, spin-polarized electrons are made to precess with the application of magnetic field and then drove to column 2 by applying different electric fields to the quantum dots of column 1. In column 2, suppose one of the electrons has lost its precessional characteristics of column 1 because of weak electric field that pushed it in column 2 and adopts that of column 2. The magnetic tunnel junction between will compare polarizations of electrons between column 2 and column 3 and admit only those electrons whose spins are matched on both sides. Consequently, one quantum dot in column 3 does not get any electron and other dot whose characteristics bears a resemblance to column 2 may get two electrons. Hence an empty quantum dot will represent a logic ´0´ for the weak electric filed applied at column 1 and the quantum dot with twice number of electrons will show a logical ´1´ and spin-dependent-flow amplification.