Title :
Hybrid III–V/silicon on insulator nonlinear nanophotonics
Author :
Raineri, F. ; Bazin, A. ; Halioua, Y. ; Karle, T. ; Monnier, P. ; Sagnes, I. ; Raj, R.
Author_Institution :
Lab. de Photonique et de Nanostruct., CNRS, Marcoussis, France
Abstract :
Hybrid III-V/silicon on insulator nonlinear nanophotonics is reported. The structure is a 2 optical level structure where the bottom level is made of a single mode SOI waveguide and the top level made of an InP-based active nanocavity (wire cavity) that contains quantum wells emitting around 1.55μm. Light channels from one level to the other through evanescent wave coupling. The nonlinear behaviour under optical injection is studied and results on switching and optical bistability is presented.
Keywords :
III-V semiconductors; indium compounds; integrated optics; nanophotonics; nanowires; optical bistability; optical resonators; optical waveguides; semiconductor quantum wells; silicon-on-insulator; InP-Si-SiO2; Si-SiO2; evanescent wave coupling; hybrid III-V/silicon on insulator nonlinear nanophotonics; light channels; nanocavity; optical bistability; optical switching; quantum wells; single mode SOI waveguide; wire cavity; Nonlinear optics; Optical bistability; Optical device fabrication; Optical solitons; Photonics; Silicon on insulator technology; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5942705
