DocumentCode :
2061038
Title :
Deep-level effects on slow current transients and current collapse in GaN MESFETs
Author :
Yonemoto, K. ; Horio, K.
Author_Institution :
Fac. of Syst. Eng., Shibaura Inst. of Technol., Tokyo, Japan
fYear :
2004
fDate :
20-25 Sept. 2004
Firstpage :
267
Lastpage :
270
Abstract :
Slow current transients in a GaN MESFET are analyzed by two-dimensional simulation in which deep levels in a semi-insulating buffer layer is considered. It is shown that when the drain voltage VD is raised abruptly, the drain current overshoots the steady-state value, and when VD is lowered, the drain current remains at a low value for some periods, showing drain lag behavior. This drain lag is shown to become a cause of so-called current collapse in the GaN MESFET.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; buffer layers; deep levels; gallium compounds; semiconductor device models; semiconductor thin films; transients; wide band gap semiconductors; GaN; GaN MESFET; current collapse; deep levels; drain current; drain lag; drain voltage; semi-insulating buffer layer; slow current transients; Buffer layers; Energy states; FETs; Gallium nitride; MESFETs; Modeling; Poisson equations; Steady-state; Transient analysis; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
Print_ISBN :
0-7803-8668-X
Type :
conf
DOI :
10.1109/SIM.2005.1511434
Filename :
1511434
Link To Document :
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