2.10 A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2dBm P1dB and 74mW PDC

Author

Larie, Aurelien ; Kerherve, Eric ; Martineau, Baudouin ; Vogt, Lionel ; Belot, Didier

Author_Institution

STMicroelectron., Crolles, France

fYear

2015

fDate

22-26 Feb. 2015

Firstpage

1

Lastpage

3

Abstract

The widespread deployment of high-data-rate wireless connectivity was enabled by the adoption of the WiGig (802.11ad) standard, consequently placing a challenge on integrated Power Amplifiers (PAs). To comply with system requirements, the PA must cover bands from 57 to 66GHz and deliver up to 10dBm RF modulated power, while OFDM modulations up to 16 or 64QAM are supported, implying a large Peak-to-Average Power Ratio (PAPR).

Keywords

CMOS analogue integrated circuits; MIMIC; OFDM modulation; millimetre wave power amplifiers; quadrature amplitude modulation; silicon-on-insulator; 16QAM; 64QAM; 802.11ad standard; OFDM modulations; PAE; PAPR; RF modulated power; UTBB FD-SOI CMOS reconfigurable power amplifier; WiGig standard adoption; efficiency 21 percent; frequency 57 GHz to 66 GHz; high-data-rate wireless connectivity; integrated PA; integrated power amplifiers; peak-to-average power ratio; size 28 nm; CMOS integrated circuits; Linearity; Logic gates; Power amplifiers; Power demand; Radio frequency; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid- State Circuits Conference - (ISSCC), 2015 IEEE International

Conference_Location

San Francisco, CA

Print_ISBN

978-1-4799-6223-5

Type

conf

DOI

10.1109/ISSCC.2015.7062919

Filename

7062919