Title :
Influence of substrate and doping profile parameters on characteristics of ion-implanted GaAs Schottky-barrier field-effect transistor (MESFET)
Author :
Shestakov, Alexander K. ; Zhuravlev, Konstantin S. ; Arykov, Vadim S. ; Kagadei, Valery A.
Author_Institution :
Rzhanov Inst. of Semicond. Phys., Russian Acad. of Sci., Novosibirsk, Russia
Abstract :
Ion-implanted GaAs MESFET was modeled and dependences of MESFET characteristics on doping profile parameters were found. These dependences allow to optimize transistor for different applications (power, high frequency or low-noise transistors).
Keywords :
III-V semiconductors; Schottky gate field effect transistors; doping profiles; gallium arsenide; ion implantation; semiconductor device models; semiconductor doping; GaAs; MESFET; Schottky-barrier field-effect transistor; doping profile; ion implantation; saturation current; threshold voltage; Doping profiles; Gallium arsenide; MESFETs; Substrates; Threshold voltage; MESFET; TCAD; modeling;
Conference_Titel :
Fundamental Problems of Micro/Nanosystems Technologies (MNST), 2010 IEEE 2nd Russia School and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-5962-9
Electronic_ISBN :
978-1-4244-5963-6
DOI :
10.1109/MNST.2010.5687132
