Title :
Optical anisotropy in research of nanolayers
Author :
Geiduk, Alexey E. ; Khasanov, Tokhir Kh
Author_Institution :
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
Abstract :
The study is aimed at solving the problem associated with simultaneous determination of reflective index and dielectric film thickness in the thickness range of less than 40 nm. This problem has arisen from the needs of the modern nanoelectronics. The article discusses the ways to solve this problem on the basis of optically anisotropic crystals with their unique properties. It is hypothesized that decrease in reflective index with decreasing film thickness is a fundamental phenomenon. This hypothesis is based on the analysis of data obtained from full-scale experiments with SiO2 samples.
Keywords :
dielectric thin films; reflectivity; refractive index; silicon compounds; SiO2; dielectric film thickness; nanoelectronics; nanolayers; optical anisotropy; reflective index; refractive index; Optical films; Optical polarization; Optical reflection; Optical variables control; Refractive index; Substrates; Ellipsometry; crystalline quartz; crystalline silicon; optical anisotropy; reflective index of dielectric film;
Conference_Titel :
Fundamental Problems of Micro/Nanosystems Technologies (MNST), 2010 IEEE 2nd Russia School and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-5962-9
Electronic_ISBN :
978-1-4244-5963-6
DOI :
10.1109/MNST.2010.5687137
