Optical anisotropy in research of nanolayers

Author

Geiduk, Alexey E. ; Khasanov, Tokhir Kh

Author_Institution

Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia

fYear

2010

fDate

9-11 Dec. 2010

Firstpage

48

Lastpage

52

Abstract

The study is aimed at solving the problem associated with simultaneous determination of reflective index and dielectric film thickness in the thickness range of less than 40 nm. This problem has arisen from the needs of the modern nanoelectronics. The article discusses the ways to solve this problem on the basis of optically anisotropic crystals with their unique properties. It is hypothesized that decrease in reflective index with decreasing film thickness is a fundamental phenomenon. This hypothesis is based on the analysis of data obtained from full-scale experiments with SiO2 samples.

Keywords

dielectric thin films; reflectivity; refractive index; silicon compounds; SiO₂; dielectric film thickness; nanoelectronics; nanolayers; optical anisotropy; reflective index; refractive index; Optical films; Optical polarization; Optical reflection; Optical variables control; Refractive index; Substrates; Ellipsometry; crystalline quartz; crystalline silicon; optical anisotropy; reflective index of dielectric film;

fLanguage

English

Publisher

ieee

Conference_Titel

Fundamental Problems of Micro/Nanosystems Technologies (MNST), 2010 IEEE 2nd Russia School and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-5962-9

Electronic_ISBN

978-1-4244-5963-6

Type

conf

DOI

10.1109/MNST.2010.5687137

Filename

5687137