Characterization of InGaAs and InGaAsN saturable absorber mirrors for high power mode locked sub-ps thin-disk lasers

Author

Schättiger, F. ; Bauer, D. ; Sutter, D. ; Puustinen, J. ; Guina, M. ; Dekorsy, T.

Author_Institution

Dept. of Phys. & Center for Appl. Photonics, Univ. Konstanz, Konstanz, Germany

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

1

Abstract

We report on the characteristic parameters of two types of saturable absorber mirrors: type 1 absorbers contain InGaAs quantum wells whereas absorbers of type 2 have InGaAsN quantum wells. For both types the structure is similar. Both types of absorbers were post-growth annealed in order to characterize the stability under elevated temperatures. We investigated the static and the dynamic reflectivity of the two absorber types in the cases of no post-growth annealing and annealing at 450° C, 650° C, and 700° C, respectively. The absorbers are designed for usage in a sub-ps mode locked Yb:YAG laser at a wavelength of 1030 nm.

Keywords

III-V semiconductors; annealing; gallium arsenide; indium compounds; laser mode locking; mirrors; optical saturable absorption; semiconductor quantum wells; solid lasers; InGaAs; InGaAsN; dynamic reflectivity; high power mode locked sub-ps thin-disk lasers; post-growth annealing; quantum wells; saturable absorber mirrors; static reflectivity; temperature 450 C; temperature 650 C; temperature 700 C; wavelength 1030 nm; Gallium arsenide;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference

Conference_Location

Munich

ISSN

Pending

Print_ISBN

978-1-4577-0533-5

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/CLEOE.2011.5942776

Filename

5942776