Title :
Optical and magneto-optical properties of neodymium and erbium doped gallium nitride epilayers
Author :
Woodward, N. ; Jiang, H.X. ; Lin, J.Y. ; Zavada, J.M. ; Readinger, E. ; Dierolf, V.
Author_Institution :
Phys. Dept., Lehigh Univ., Bethlehem, PA, USA
Abstract :
This work investigated the effects of applied magnetic fields on rare earth spectra and was able (using CEES) to determine Zeeman splittings and the associate effective g-values of the ions´ excited and ground states. The coupling of the Zeeman split transition strengths to the direction of the piezoelectric field present in GaN along the c-axis. This coupling between magnetic polarization and strain induced by defects or lattice mismatch may be related and essential to the strength of the remnant magnetization that is observed in ferromagnetic hysteresis loops and which show a dependence on defect levels, substrate, and growth conditions.
Keywords :
III-V semiconductors; Zeeman effect; erbium; excited states; gallium compounds; ground states; neodymium; positive ions; semiconductor epitaxial layers; wide band gap semiconductors; CEES; GaN:Nd,Er; Zeeman splittings; defects; effective g-values; excited state; ferromagnetic hysteresis loops; ground state; lattice mismatch; magnetic polarization; magneto-optical properties; neodymium, erbium doped gallium nitride epilayers; remnant magnetization; strain; Couplings; Erbium; Gallium nitride; Ions; Magnetic fields; Magnetic hysteresis; Stationary state;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5942788