• DocumentCode
    2062976
  • Title

    Excitation quenching in Er3+-doped Al2O3 amplifiers

  • Author

    Agazzi, L. ; Wörhoff, K. ; Pollnau, M.

  • Author_Institution
    Integrated Opt. Microsyst. Group, Univ. of Twente, Enschede, Netherlands
  • fYear
    2011
  • fDate
    22-26 May 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Excitation quenching in Er3+-doped Al2O3 amplifiers is reported. The growth method allows for straightforward deposition on silicon wafers and direct integration with silicon photonic circuits. Net gain over a bandwidth of 80 nm (1500-1580 nm) and with a peak value of 2.0 dB/cm at 1533 nm was measured in the waveguide amplifiers . By fitting the gain measurements with a simple Er3+ rate-equation model, the values for the coefficient WETU of energy-transfer upconversion (ETU) between neighboring Er3+ ions is obtained, which has a detrimental influence on the amplifier performance.
  • Keywords
    aluminium compounds; amplifiers; erbium; integrated optics; optical fabrication; optical waveguides; radiation quenching; Al2O3:Er; Si; energy-transfer upconversion; excitation quenching; gain measurements; integrated optics; silicon photonic circuits; silicon wafers; waveguide amplifiers; wavelength 1533 nm;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
  • Conference_Location
    Munich
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-0533-5
  • Electronic_ISBN
    Pending
  • Type

    conf

  • DOI
    10.1109/CLEOE.2011.5942789
  • Filename
    5942789
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2062976