DocumentCode
2063406
Title
Observer based junction temperature estimator in thermoelectrical aging
Author
Ginart, Antonio ; Ali, Irfan N. ; Barlas, Irtaza ; Kalgren, Patrick W. ; Roemer, Michael J. ; Goebel, Kai
Author_Institution
Impact Technol., Rochester, NY, USA
fYear
2010
fDate
6-13 March 2010
Firstpage
1
Lastpage
9
Abstract
Transistor thermal model is nonlinear and highly dependent upon temperature. For reliability assessments, accurate estimation of the junction temperature is especially critical. This paper proposes a novel approach that employs an observer during thermoelectrical aging for estimation of the junction temperature based on available and measurable temperature data.
Keywords
ageing; observers; semiconductor device reliability; thermoelectricity; transistors; observer based junction temperature estimator; reliability assessment; thermoelectrical aging; transistor thermal model; Accelerated aging; Circuit testing; Degradation; Equations; Radio frequency; Semiconductor materials; Temperature dependence; Temperature measurement; Thermal variables measurement; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Aerospace Conference, 2010 IEEE
Conference_Location
Big Sky, MT
ISSN
1095-323X
Print_ISBN
978-1-4244-3887-7
Electronic_ISBN
1095-323X
Type
conf
DOI
10.1109/AERO.2010.5446831
Filename
5446831
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