Title :
13.6 A 600μW Bluetooth low-energy front-end receiver in 0.13μm CMOS technology
Author :
Selvakumar, Anith ; Zargham, Meysam ; Liscidini, Antonio
Author_Institution :
Univ. of Toronto, Toronto, ON, Canada
Abstract :
One of the main goals for the next generation of radios for wireless sensor and body-area networks (WSN and WBAN) is a sub-mW receiver (RX) compliant with energy-harvested supplies. In this direction, the Bluetooth standard has introduced a low-energy operative mode (BLE) with wider channel spacing (2MHz) and relaxed blocker tolerance. The minimum sensitivity required is -70dBm but even with a sensitivity 10dB lower the BLE receiver can have a noise figure close to 19dB [1]. Although linearity and noise specs have been significantly relaxed, the design of a sub-mW solution remains challenging since the power dissipation cannot be simply scaled with the spurious-free-dynamic-range (SFDR). In fact, the ultimate bound is set by the power burned in the voltage-controlled oscillator (VCO), which is used for the generation of the local oscillator (LO) necessary for the signal downconversion. Since, for a targeted phase noise, the current required by the VCO is inversely proportional to the quality factor of the resonator adopted, a straightforward approach is to use a high-Q tank like the FBAR used by Wang et al. [2]. However in low-cost CMOS processes, when high-Q resonators are not present, an alternative strategy is to share the VCO bias current with the other blocks of the RF front-end as in the LMV cell proposed by Tedeschi et al. [3].
Keywords :
Bluetooth; CMOS integrated circuits; Q-factor; phase noise; radio receivers; voltage-controlled oscillators; Bluetooth standard; CMOS process; CMOS technology; VCO; channel spacing; frequency 2 MHz; local oscillator; low-energy front-end receiver; low-energy operative mode; phase noise; power 600 muW; quality factor; relaxed blocker tolerance; signal downconversion; size 0.13 mum; voltage-controlled oscillator; Bluetooth; CMOS integrated circuits; Power demand; Receivers; Resonator filters; Sensitivity; Transistors;
Conference_Titel :
Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-6223-5
DOI :
10.1109/ISSCC.2015.7063017