• DocumentCode
    2063602
  • Title

    Integrated silicon RF front-end solutions for mobile communications

  • Author

    Joseph, Alvin ; Wolf, Robert

  • Author_Institution
    Microelectron. Div., IBM, Essex Junction, VT, USA
  • fYear
    2013
  • fDate
    28-31 Oct. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Silicon technologies have continued to usurp other exotic technologies, such as GaAs and Silicon-on-Sapphire (SOS), from the RF wireless communication system to provide a more cost-effective integration path. The integration of RF front-end (RFFE) electronics is a good example of this trend. RFFE components such as, transmit-receive switch, antenna tuners, low-noise amplifiers, and power amplifiers, are being integrated wherever possible. In this paper we discuss the high-resistivity silicon-on-insulator (HR-SOI) technology as a cost effective solution for the RFFE integration in a wireless mobile communication system.
  • Keywords
    mobile communication; HR-SOI technology; RF front-end electronics; RF wireless communication system; RFFE components; RFFE integration; high-resistivity silicon-on-insulator technology; integrated silicon RF front-end solutions; mobile communications; CMOS integrated circuits; Field effect transistors; GSM; Harmonic analysis; Power amplifiers; Radio frequency; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2013 IEEE 10th International Conference on
  • Conference_Location
    Shenzhen
  • ISSN
    2162-7541
  • Print_ISBN
    978-1-4673-6415-7
  • Type

    conf

  • DOI
    10.1109/ASICON.2013.6811827
  • Filename
    6811827