DocumentCode
2063602
Title
Integrated silicon RF front-end solutions for mobile communications
Author
Joseph, Alvin ; Wolf, Robert
Author_Institution
Microelectron. Div., IBM, Essex Junction, VT, USA
fYear
2013
fDate
28-31 Oct. 2013
Firstpage
1
Lastpage
4
Abstract
Silicon technologies have continued to usurp other exotic technologies, such as GaAs and Silicon-on-Sapphire (SOS), from the RF wireless communication system to provide a more cost-effective integration path. The integration of RF front-end (RFFE) electronics is a good example of this trend. RFFE components such as, transmit-receive switch, antenna tuners, low-noise amplifiers, and power amplifiers, are being integrated wherever possible. In this paper we discuss the high-resistivity silicon-on-insulator (HR-SOI) technology as a cost effective solution for the RFFE integration in a wireless mobile communication system.
Keywords
mobile communication; HR-SOI technology; RF front-end electronics; RF wireless communication system; RFFE components; RFFE integration; high-resistivity silicon-on-insulator technology; integrated silicon RF front-end solutions; mobile communications; CMOS integrated circuits; Field effect transistors; GSM; Harmonic analysis; Power amplifiers; Radio frequency; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location
Shenzhen
ISSN
2162-7541
Print_ISBN
978-1-4673-6415-7
Type
conf
DOI
10.1109/ASICON.2013.6811827
Filename
6811827
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